Product description:
N channel 650V super junction MOSFET The 65R600C is an N-channel power MOSFET designed according to super junction technology. The device features very low on-resistance and ruggedness for switching applications. Its low conduction losses and fast switching can make applications more efficient.
Product parameters:
Type: N-Channel
Drain-source voltage (Vdss): 650V
Continuous drain current (Id): 7A
Power (Pd): 63W
On-resistance (RDS(on)@Vgs,Id): 620mΩ@10V, 3A
Threshold voltage (Vgs(th)@Id): 4V@250μA
Product features:
• Low gate charge
• Low RDS(on) (Low FOM) per die area
• Very low switching and conduction losses
• Very high commutation durability
Product application:
• TV and computer power
• Adopters and Lighting
• Telecom and UPS (Uninterruptible Power Supply)
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65R600C
